Vijay Gopal Thirupakuzi Vangipuram

M. Hartensveld, B. Melanson, V. Thirupakuzi Vangipuram, and J. Zhang, “450 nm Gallium Nitride Alternating Current Light-Emitting Diode,” IEEE Photonics Journal 12(6), 1–6 (2020)

K. Zhang, C. Hu, A.F.M.A.U. Bhuiyan, M. Zhu, V.G.T. Vangipuram, M.R. Karim, B.H.D. Jayatunga, J. Hwang, K. Kash, and H. Zhao, “Pulsed-Mode MOCVD Growth of ZnSn(Ga)N2 and Determination of the Valence Band Offset with GaN,” Crystal Growth & Design 22(8), 5004–5011 (2022)

V. Talesara, Y. Zhang, V.G.T. Vangipuram, H. Zhao, and W. Lu, “Vertical GaN-on-GaN pn power diodes with Baliga figure of merit of 27 GW/cm2,” Applied Physics Letters 122(12), 123501 (2023)

Y. Zhang, V.G. Thirupakuzi Vangipuram, K. Zhang, and H. Zhao, “Investigation of carbon incorporation in laser-assisted MOCVD of GaN,” Applied Physics Letters 122(16), 162101 (2023)

K. Zhang, C. Hu, V.G. Thirupakuzi Vangipuram, K. Kash, and H. Zhao, “Design of InGaN-ZnSnGa2N4 quantum wells for high-efficiency amber light emitting diodes,” Journal of Vacuum Science & Technology A 41(3), 033206 (2023)

Y. Xu, V.G.T. Vangipuram, V. Talesara, J. Cheng, Y. Zhang, T. Hashimoto, E. Letts, D. Key, H. Zhao, and W. Lu, “7.86 kV GaN-on-GaN PN power diode with BaTiO3 for electrical field management,” Applied Physics Letters 123(14), 142105 (2023)

K. Zhang, C. Hu, V.G. Thirupakuzi Vangipuram, L. Meng, C. Chae, M. Zhu, J. Hwang, K. Kash, and H. Zhao, “Effect of varying threading dislocation densities on the optical properties of InGaN/GaN quantum wells with intentionally created V-shaped pits,” Journal of Vacuum Science & Technology B 41(6), 062207 (2023)

V.G. Thirupakuzi Vangipuram, K. Zhang, and H. Zhao, “Suppressing Carbon Incorporation in Metal–Organic Chemical Vapor Deposition GaN Using High-Offcut-Angled Substrates,” Physica Status Solidi (RRL) – Rapid Research Letters 18(3), 2300318 (2024)

K. Zhang, V.G. Thirupakuzi Vangipuram, C. Chae, J. Hwang, and H. Zhao, “Experimental determination of the band offsets at the UWBG p-LiGa5O8/Ga2O3 interface,” Applied Physics Letters 124(12), 122106 (2024)

V.G. Thirupakuzi Vangipuram, K. Zhang, and H. Zhao, “Wet and dry etching of ultrawide bandgap LiGa5O8 and LiGaO2,” Journal of Vacuum Science & Technology B 42(3), 032204 (2024)

K. Zhang, V.G.T. Vangipuram, H.-L. Huang, J. Hwang, and H. Zhao, “Discovery of a Robust P-Type Ultrawide Bandgap Oxide Semiconductor: LiGa5O8,” Advanced Electronic Materials 11(1), 2300550 (2025)

C. Hu, A. Mukit, V.G. Thirupakuzi Vangipuram, C. Chae, J. Hwang, K. Kash, and H. Zhao, “Optimizing Metal-Organic Chemical Vapor Deposition for Ultrawide Bandgap MgSiN2 Thin-Films,” Physica Status Solidi (RRL) – Rapid Research Letters n/a(n/a), 2500109 (2025)

M. Daeumer, J.-H. Yoo, Z. Xu, M. Cho, M. Bakhtiary-Noodeh, T. Detchprohm, Y. Zhang, V.G. Thirupakuzi Vangipuram, V. Talesara, Y. Xu, E. Letts, D. Key, T.T. Li, Q. Shao, R. Dupuis, S.-C. Shen, W. Lu, H. Zhao, T. Hashimoto, and T.A. Laurence, “Three-dimensional photoluminescence imaging of threading dislocations in GaN by sub-band optical excitation,” Sci Rep 15(1), 333 (2025)

V.G. Thirupakuzi Vangipuram, K. Zhang, D.S. Yu, L. Meng, C. Chae, Y. Xu, J. Hwang, W. Lu, and H. Zhao, “Ultrawide bandgap LiGa5O8/β-Ga2O3 heterojunction p–n diodes,” APL Electronic Devices 1(1), 016115 (2025)

C. Hu, V.G.T. Vangipuram, C. Chae, I.K. Turan, N. Hoven, W.R.L. Lambrecht, J. Hwang, Y. Ijiri, H. Zhao, and K. Kash, “Metal-organic chemical vapor deposition of MgGeN2 films on GaN and sapphire,” (2025)

K. Zhang, V.G. Thirupakuzi Vangipuram, and H. Zhao, “Experimental analysis of potential origin of p-type conductivity in LiGa5O8,” APL Materials 13(4), 041104 (2025)

A.F.M.A.U. Bhuiyan, L. Meng, D.S. Yu, S. Dhara, H.-L. Huang, V.G.T. Vangipuram, J. Hwang, S. Rajan, and H. Zhao, “Electrical and structural characterization of in situ MOCVD Al2O3/β-Ga2O3 and Al2O3/β-(AlxGa1−x)2O3 MOSCAPs,” Journal of Applied Physics 137(17), 174101 (2025)

V.G. Thirupakuzi Vangipuram, C. Hu, A. Mukit, C. Chae, K. Zhang, J. Hwang, K. Kash, and H. Zhao, “Metal–Organic Chemical Vapor Deposition of MgSiN2 Thin Films,” Crystal Growth & Design 25(13), 4747–4755 (2025)

L. Meng, V.G. Thirupakuzi Vangipuram, D.S. Yu, C. Hu, and H. Zhao, “Metalorganic chemical vapor deposition in situ etching of β-Ga2O3 and β-(AlxGa1−x)2O3,” Journal of Vacuum Science & Technology B 43(5), 052201 (2025)

K. Zhang, V.G.T. Vangipuram, L. Meng, C. Chae, J. Hwang, and H. Zhao, “Mist Chemical Vapor Deposition of Ultrawide Bandgap p-LiGa5O8 on AlN and Determination of the Band Offsets at the LiGa5O8/AlN Interface,” Physica Status Solidi (RRL) – Rapid Research Letters n/a(n/a), 2500192 (2025)

D.S. Yu, L. Meng, V.G. Thirupakuzi Vangipuram, C. Chae, J. Hwang, and H. Zhao, “Metal–organic chemical vapor deposition of p-type NiO and NiO/β-Ga2O3 PN diodes,” APL Electronic Devices 1(4), 046104 (2025)

W. Li, Y. Zhang, V.G. Thirupakuzi Vangipuram, H. Zhao, S.A. Ringel, and A.R. Arehart, “The impact of laser and growth rate on trap formation in conventional and laser-assisted MOCVD GaN,” Applied Physics Letters 127(14), 142104 (2025).

Y.Xu, V.G. Thirupakuzi Vangipuram, E. Letts, T. Hashimoto, H. Zhao, W. Lu, ">10 kV GaN-on-GaN PN Power Diode with Double Field Plate Structure", Physica Status Solidi (RRL) -Rapid Research Letters (2025) (submitted) 

V.G. Thirupakuzi Vangipuram, A. Mukit, K. Zhang, S. Salmani-Rezaie, H. Zhao, “Metalorganic Chemical Vapor Deposition of AlScN Thin Films and AlScN/AlN/GaN Heterostructures”, Crystal Growth & Design (2025) (submitted)

A. Mukit, C. Hu, V.G. Thirupakuzi Vangipuram, J. Liu, A. Akoto-Yeboah, Z. Mi, S. Salmani-Rezaie, K. Kash, H. Zhao, “A Comprehensive Study of Metal-Organic Chemical Vapor Deposition of Ultrawide-Bandgap MgSiN2 Thin Films on Sapphire,”, Journal of Applied Physics (2025) (submitted)